Figure 4
From: Controlling charge-density-wave states in nano-thick crystals of 1T-TaS2
Gate-controlled CDW states in a 1T-TaS2 nano-thick crystal.
The temperature dependence of the resistance (Rxx) for a 61-nm-thick crystal with different gate voltages (VG) ranging from 0 V to 3 V. The solid and broken lines represent the Rxx in the cooling and warming cycle, respectively. The red and green curves were taken before and after the gating experiments. Inset shows the TCCDW_COOL-VG phase diagram, where the TCCDW_COOL represents the NCCDW-CCDW transition temperature during the cooling cycle.
