Figure 6
From: The Interface between Gd and Monolayer MoS2: A First-Principles Study

DOS (sum of both spin channels) of the Mo atoms at the F and H sites for the two-layer Gd/MoS2 interface: Comparison between the GGA and GGA+SOC methods.
EF = 0 eV.
From: The Interface between Gd and Monolayer MoS2: A First-Principles Study
DOS (sum of both spin channels) of the Mo atoms at the F and H sites for the two-layer Gd/MoS2 interface: Comparison between the GGA and GGA+SOC methods.
EF = 0 eV.