Figure 1 | Scientific Reports

Figure 1

From: Origin of Degradation Phenomenon under Drain Bias Stress for Oxide Thin Film Transistors using IGZO and IGO Channel Layers

Figure 1

IDG−VGS transfer characteristics of (a) IGZO-TFT and (b) IGO-TFT.

The measurements were performed in a double sweep mode of VGS at VDS's of 0.5, 5.5, 10.5 and 15.5 V. The channel width and length of the measured devices were defined as 40 and 20 μm, respectively. The final annealing temperatures for IGZO and IGO-TFTs were 250 and 300°C.

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