Figure 2 | Scientific Reports

Figure 2

From: Origin of Degradation Phenomenon under Drain Bias Stress for Oxide Thin Film Transistors using IGZO and IGO Channel Layers

Figure 2

Variation in the IDG−VGS transfer characteristics for the (a) IGZO-TFT and (b) IGO-TFT with a lapse of stress time for 104 s under the DBS of 20 V.

A VDS of 10 V was applied for the measurements. The negative shift in VTH for the IGZO-TFT was 1.7 V after the DBS, contrary to the IGO-TFT, which showed almost no shift in VTH.

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