Figure 1
From: Hyperdoping silicon with selenium: solid vs. liquid phase epitaxy
(a) A sequence of 1.7 MeV He RBS/channeling spectra of selenium implanted Si single crystals after different annealing (taking sample SiSe2.3 as the example). The channeling is along Si[001]. The Si matrix is recrystallized after both FLA (1.3 ms, 3.4 kV) and PLA (308 nm, 28 ns, 0.9 J/cm2). The inset shows a zoom for the selenium signal. We can see that selenium ions are mostly substitutional to the Si sites. However, for the PLA sample, selenium ions do not substitute Si sites at the near surface range. (b) The depth profile of selenium in Si after FLA or PLA calculated from RBS spectra. The projected range of selenium in FLA samples is in a reasonable agreement with SRIM simulation after considering the well-known discrepancy in the projection range between SRIM simulation and the experimental values30,31,32. After PLA, a significant redistribution of selenium is observed. The inset shows the RBS spectra for the as-implanted and FLA samples measured using 1.5 MeV He ions. There is no re-distribution of selenium after FLA.
