Figure 2 | Scientific Reports

Figure 2

From: Hyperdoping silicon with selenium: solid vs. liquid phase epitaxy

Figure 2

The selenium substitutional fraction in selenium implanted Si after annealing by flash lamp or pulsed laser at different annealing energy:

(a) FLA at different flash-lamp charging voltages (different annealing temperatures) with the pulse duration of 1.3 ms, (b) FLA with different pulse duration and different charging voltages to have similar peak temperature (~ 1473 K) in the sample and (c) PLA (308 nm, 28 ns) with different energy densities.

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