Figure 3
From: Hyperdoping silicon with selenium: solid vs. liquid phase epitaxy
Representative Raman or XRD results taking SiSe0.9 as the example after FLA (1.3 ms, 3.4 kV) and PLA (308 nm, 28 ns, 0.9 J/cm2).
(a) μ-Raman spectra: A virgin Si is also shown for comparison. The spectra have been vertically offset for clarity. (b) X-ray diffraction θ − 2θ scans: The broad shoulder at the left side for the as-implanted sample is due to the ion beam induced damage. After annealing, this broad shoulder disappears and the oscillation indicates the good crystalline quality.
