Figure 5
From: Hyperdoping silicon with selenium: solid vs. liquid phase epitaxy
(a) The carrier concentration and (b) the Hall mobility at 300 K of selenium implanted Si annealed by FLA (1.3 ms, 3.4 kV) or PLA (308 nm, 28 ns, 0.9 J/cm2) with optimized parameters. The mobility of FLA samples is comparable with the shallow donor considering the dopant concentration39. The solid lines are only for guiding the eyes.
