Table 1 Sample definition and related parameters. The samples are referred as SiSe0.9PLA annealed by pulsed laser or SiSe0.9FLA annealed by flash lamp, respectively, with corresponding optimal parameters. The depth distribution of selenium (estimated thickness) is calculated using SRIM and verified by RBS measurements

From: Hyperdoping silicon with selenium: solid vs. liquid phase epitaxy

Sample ID

Implantation parameters

Estimated thickness

Selenium peak concentration (%)

SiSe0.9

110 keV, 2.8×1015 cm−2

~150 nm

0.9

 

50 keV, 1.4×1015 cm−2

  

SiSe1.1

60 keV, 2.5×1015 cm−2

~100 nm

1.1

SiSe2.3

60 keV, 5.0×1015 cm−2

~100 nm

2.3