Table 1 Results Summary: Comparison of device results for all three device structures. Averages were taken for at least 5 devices. Errors given are the standard deviation of the results.

From: Defining the light emitting area for displays in the unipolar regime of highly efficient light emitting transistors

 

NPLET Au/Ca

LET-Au/CAC

Pix-LET Au/CAC

Device Structure

Bilayer

Bilayer

Bilayer

μh [cm2/V.s]

0.08 ± 0.02

0.004 ± 0.001

0.007 ± 0.001

ON/OFF

>104

>7 × 104

>104

Maximum Brightness [cd m−2]

1400 ± 50

1000 ± 100

1350 ± 50

EQE at maximum brightness [%]

0.09 ± 0.01

0.45 ± 0.05

1 ± 0.1

Aperture ratio at Vg = 150 V (light emitting area/total LEFET area)%

2.5%

15%

24%