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Figure 1

From: Substitution-induced spin-splitted surface states in topological insulator (Bi1−xSbx)2Te3

Figure 1

STM images and differential conductance spectroscopy.

(a) The STM image (150 nm × 150 nm) of (Bi1−xSbx)2Te3 film with x = 0.45. Scanning conditions: V = −1.72 V, I = 207 pA. The inset shows line profile along the blue line marked AA′ in (a). (b) The atomic-resolution STM image (10 nm × 10 nm) obtained on terrace in (a). Scanning parameter is 0.298 V and 207 pA. The lattice constant is about 0.44 nm. The inset shows the atomic-resolution STM image of the Bi2Te3 films (5 nm × 5 nm, −0.3 V, 270 pA). (c) Typical dI/dV curves obtained on (Bi1−xSbx)2Te3 films with x = 0 (black line), 0.45 (red line), 0.62 (green line) and 0.87 (blue line), respectively. The pink arrows show the approximate positions of Dirac point (ED). (d) Schematic illustration of band structure and surface state of (Bi1−xSbx)2Te3 films varied with x value. The pink bar shows the evolution of position of Dirac Point with different x values.

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