Figure 2
From: Superior broadband antireflection from buried Mie resonator arrays for high-efficiency photovoltaics

(a) Calculated reflectance spectra of the SiNx-layer-buried SiNP arrays, where the thickness of the SiNx layer is fixed at 65 nm and the period of SiNP arrays varies from 1000 to 400 nm. The zoomed-in reflectance spectra of (b) the interference and (c) the Mie scattering regions indicated by two dashed circles in the Figure (a).