Figure 3
From: Superior broadband antireflection from buried Mie resonator arrays for high-efficiency photovoltaics
Calculated reflectance of the unburied and SiNx film buried SiNP Mie resonator arrays.
The period of the SiNPs is 400 nm. The thickness of the SiNx layer varies from 35 nm to 85 nm. The dashed lines guide the reflectance dips for two different antireflection mechanisms.
