Figure 5
From: Superior broadband antireflection from buried Mie resonator arrays for high-efficiency photovoltaics
(a) Calculated absorption ratio within a single SiNP and the substrate as a function of wavelength. The inset shows a schematic diagram of a nanostructured silicon wafer as well as the magnified absorption spectra within the single SiNP over the wavelength from 500 to 730 nm. (b) Electric field distribution in a cross-section within a single unburied SiNP. (c) Electric field distribution in a cross-section within a single 65-nm-SiNx-film-buried SiNP. The dashed white lines outline the interfaces between the substrate and the SiNP.
