Figure 2
From: Maskless milling of diamond by a focused oxygen ion beam
Profiling of oxygen ion induced damage in diamond.
(a) CL depth profiles measured from non-processed single crystal diamond and regions milled by 2, 8, 16 and 30 keV oxygen ions. (b) CL generation profiles simulated for the electron beam energies used for CL depth profiling. Inset: Depth of damage in single crystal (100) diamond as a function of oxygen ion energy determined using the data shown in (a) and (b). (c) Depth distributions of oxygen implanted in amorphous carbon simulated using SRIM for ion energies of 2, 8, 16 and 30 keV.
