Figure 4
From: The reason why thin-film silicon grows layer by layer in plasma-enhanced chemical vapor deposition
Schematic diagram of layer-by-layer growth of thin-film Si by PECVD.
(a) Generation of a DB via H abstraction of a SiH3 radical. (b) Adsorption of a SiH3 radical on a DB. (c) DB diffusion within the upper layer consisting of SiH3 sites. (d) DB diffusion from the upper layer to the lower layer. (e) Generation of a DB in the lower layer. (f) Two-dimensional growth by the adsorption of SiH3 radicals onto the lower layer.
