Figure 7
From: Silicene nanomesh
(a) Transfer characteristics of the 9.1 nm dual-gated SNM FET at Vbias = 0.5 and 0.71 V compared with that of the single-gated SNM FETs with the same Lgate at Vbias = 0.5 V. The inset is the side view of the dual-gated SNM transistor device. (b) Output characteristics for the 9.1 nm single- and dual-gated SNM FETs at different gate voltages.
