Figure 3
From: UV sensing using film bulk acoustic resonators based on Au/n-ZnO/piezoelectric-ZnO/Al structure

Frequency response of (a) a traditional FBAR device and (b) a new FBAR device with an n-ZnO semiconductor layer.
From: UV sensing using film bulk acoustic resonators based on Au/n-ZnO/piezoelectric-ZnO/Al structure

Frequency response of (a) a traditional FBAR device and (b) a new FBAR device with an n-ZnO semiconductor layer.