Figure 6
From: UV sensing using film bulk acoustic resonators based on Au/n-ZnO/piezoelectric-ZnO/Al structure

Equivalent circuit models of (a) a Schottky diode; (b) a FBAR device; and (c) a FBAR device with an n-ZnO semiconductor layer.
From: UV sensing using film bulk acoustic resonators based on Au/n-ZnO/piezoelectric-ZnO/Al structure
Equivalent circuit models of (a) a Schottky diode; (b) a FBAR device; and (c) a FBAR device with an n-ZnO semiconductor layer.