Figure 4 | Scientific Reports

Figure 4

From: Anatomy of vertical heteroepitaxial interfaces reveals the memristive mechanism in Nb2O5-NaNbO3 thin films

Figure 4

Electrical properties of the NO and NNO composite thin film to show the memristive switching process: (a) Schematic of the junction with the electrodes and tip. The feasible theoretical model is also provided as an inset. (b) The initial I–V curve of the device. Initiative 5 I–V curves under cyclic negative bias (c) and cyclic positive bias (d). (e) Time dependent current value shows the electric-field-driven dynamic resistance changes in NNO-NO. (f) Measurement delay time dependent I–V curves show the frequency dependent phenomenon.

Back to article page