Figure 6
From: Photostability of pulsed laser deposited amorphous thin films from Ge-As-Te system
Raman scattering spectra of (a) Ge10As30Te60 and (b) Ge20As20Te60 thin films in different states of the samples (as-deposited, exposed at 1342 nm, annealed and post-annealing exposed at 1342 nm).
