Table 1 Nominal and real chemical composition (from EDS, ± 0.5 at. %) of Ge-As-Te thin films. MCN and MCN* stand for the mean coordination numbers calculated from nominal composition and EDS results, respectively. Surface roughness RMS values were extracted from AFM data. Thicknesses of two series of fabricated thin films were determined by VASE data analysis (±2 nm)

From: Photostability of pulsed laser deposited amorphous thin films from Ge-As-Te system

Nominal composition

MCN

Ge (at. %)

As (at. %)

Te (at. %)

MCN*

Surface roughness (nm)

Thickness (nm)

Ge10As20Te70

2.40

13.3

23.0

63.7

2.50

1.72 ± 0.15

280/1050

Ge10As30Te60

2.50

11.6

30.1

58.2

2.53

1.06 ± 0.11

270/870

Ge10As40Te50

2.60

12.2

38.6

49.2

2.63

1.05 ± 0.11

320/810

Ge10As50Te40

2.70

10.3

50.9

38.8

2.72

0.89 ± 0.09

335/930

Ge10As60Te30

2.80

14.1

46.0

39.9

2.74

1.08 ± 0.11

375/1000

Ge20As20Te60

2.60

22.5

19.2

58.3

2.64

1.26 ± 0.12

330/1010

Back to article page