Table 2 Ge-As-Te thin films optical band gap values (in eV) at different stages of the experiments (as-deposited, exposed, annealed and post-annealing exposed). Band gap values were extracted from VASE data analysis (±0.01 eV). Note that data shown are for films with ~300 nm thickness. Eirr is the energy of laser light used for irradiation experiments
From: Photostability of pulsed laser deposited amorphous thin films from Ge-As-Te system
Eirr | 1.17 eV | 0.92 eV | ||||||
|---|---|---|---|---|---|---|---|---|
as-deposited | annealed | as-deposited | annealed | |||||
composition | non-irrad. | irradiated | non-irrad. | irradiated | non-irrad. | irradiated | non-irrad. | irradiated |
Ge10As20Te70 | 0.90 | 0.89 | 0.83 | 0.82 | 0.90 | 0.79 | 0.86 | 0.77 |
Ge10As30Te60 | 0.90 | 0.91 | 0.94 | 0.89 | 0.89 | 0.84 | 0.96 | 0.88 |
Ge10As40Te50 | 0.89 | 0.89 | 0.96 | 0.95 | 0.90 | 0.90 | 0.99 | 0.95 |
Ge10As50Te40 | 0.89 | 0.92 | 1.00 | 1.00 | 0.90 | 0.90 | 1.00 | 1.01 |
Ge10As60Te30 | 0.90 | 0.90 | 1.04 | 1.06 | 0.89 | 0.89 | 1.07 | 1.07 |
Ge20As20Te60 | 0.89 | 0.88 | 1.02 | 1.01 | 0.90 | 0.89 | 1.01 | 1.00 |
