Table 3 Refractive indices (at 1540 nm) of Ge-As-Te thin films at different stages of the experiments (as-deposited, exposed, annealed and post-annealing exposed). Refractive indices were extracted from VASE data analysis (±0.01). Note that data shown are for films with ~300 nm thickness. Eirr is the energy of laser light used for irradiation experiments
From: Photostability of pulsed laser deposited amorphous thin films from Ge-As-Te system
Eirr | 1.17 eV | 0.92 eV | ||||||
|---|---|---|---|---|---|---|---|---|
as-deposited | annealed | as-deposited | annealed | |||||
composition | non-irrad. | irradiated | non-irrad. | irradiated | non-irrad. | irradiated | non-irrad. | irradiated |
Ge10As20Te70 | 3.77 | 3.77 | 3.75 | 3.74 | 3.76 | 3.76 | 3.75 | 3.74 |
Ge10As30Te60 | 3.72 | 3.73 | 3.68 | 3.66 | 3.69 | 3.68 | 3.67 | 3.66 |
Ge10As40Te50 | 3.70 | 3.69 | 3.61 | 3.62 | 3.71 | 3.70 | 3.61 | 3.62 |
Ge10As50Te40 | 3.69 | 3.70 | 3.60 | 3.58 | 3.70 | 3.69 | 3.59 | 3.57 |
Ge10As60Te30 | 3.66 | 3.65 | 3.53 | 3.50 | 3.68 | 3.66 | 3.52 | 3.52 |
Ge20As20Te60 | 3.62 | 3.62 | 3.52 | 3.51 | 3.63 | 3.63 | 3.53 | 3.52 |
