Figure 3
From: Light-Emitting Devices Based on Top-down Fabricated GaAs Quantum Nanodisks
Temperature-dependent PL spectra of the (a) 4-nm-thick and 8-nm-thick GaAs quantum NDs and MQWs at 7 K. Integrated PL intensities of the (b) 4-nm-thick and (c) 8-nm-thick GaAs quantum NDs as a function of the inverse temperature.The dashed lines are fitting results obtained using Eq. (1).
