Figure 1 | Scientific Reports

Figure 1

From: Temperature Dependence of Electric Transport in Few-layer Graphene under Large Charge Doping Induced by Electrochemical Gating

Figure 1

a) Micrograph of one of the FLG devices where the exposed pads for wire bonding and the photoresist (PR) protection layer are clearly seen. The inset shows a closer view into the region of the Hall-bar shaped FLG flake and the PR window; b) Schematic of the complete device with the PES drop casted over the PR window and the electrical connections for the 4-wire sheet resistance and Hall voltage measurements. The gate voltage VG is applied between a platinum wire immersed in the PES and the ground electrode; c) An example of a Dirac curve, i.e. a sheet conductance vs. VG curve recorded between +3 V and −3 V in a 4LG device.

Back to article page