Figure 2 | Scientific Reports

Figure 2

From: Temperature Dependence of Electric Transport in Few-layer Graphene under Large Charge Doping Induced by Electrochemical Gating

Figure 2

The induced charge density n2D as function of the gate voltage measured by different techniques in 3LG, 4LG and 5LG devices. The results of Hall effect (orange diamonds) and double-step chronocoulometry (DSCC) measurements (black, red and blue circles) are compared. The range of n2D values estimated at VG = 4 V for 4LG and 5LG from an ab-initio evaluation of the quantum capacitance of the devices is also shown (red and blue hatched regions). The inset shows an example of the measured gate current (red line) at the step removal of gate voltage (black line) in a 4LG device. This is a part of the procedure for the determination of n2D by DSCC (see text for details).

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