Figure 3 | Scientific Reports

Figure 3

From: Temperature Dependence of Electric Transport in Few-layer Graphene under Large Charge Doping Induced by Electrochemical Gating

Figure 3

The experimental sheet resistances as function of temperature measured at different gating-induced surface charge densities (reported in the legends) in a) a 3LG device for positive gating (electron doping); b) a 4LG device for positive gating; c) the same as in b) but for negative gating (hole doping); d) a 5LG device for positive and negative gating.

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