Figure 4 | Scientific Reports

Figure 4

From: Temperature Dependence of Electric Transport in Few-layer Graphene under Large Charge Doping Induced by Electrochemical Gating

Figure 4

Log-log plot of the increase of the sheet resistance in the range 20–280 K for a 4LG device at different surface charge densities induced by a) positive gating (electron doping) and b) negative gating (hole doping). Dotted lines that represent the linear, quadratic and quartic T dependences are also shown for comparison. Dash-dotted lines are the generalized Bloch-Grüneisen fits of the curves at (a) VG = 2 V, i.e. n2D = 1.73·1014 cm−2 and (b) VG = −3 V, i.e. n2D = −1.75·1014 cm−2.

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