Figure 5 | Scientific Reports

Figure 5

From: Temperature Dependence of Electric Transport in Few-layer Graphene under Large Charge Doping Induced by Electrochemical Gating

Figure 5

Carrier mobility as a function of temperature in a 4LG device under electron (a) and hole (b) doping regimes. The mobility is suppressed by an increase in both charge density and temperature. A crossover in the temperature dependence of the mobility is evident around 100 K in all the curves; (c) Longitudinal resistance as a function of temperature for 3LG and 4LG devices before PES drop-casting. Even if the PES is not over the channel we can see the same crossover from a linear to a quadratic temperature dependence around 100 K observed in the gated devices.

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