Figure 6
(a) Longitudinal sheet resistance as a function of temperature between 15 and 90 K for the 4LG device at two different gating levels corresponding to VG = 3 V (green line) and VG = 4 V (orange line). Black dashed lines are the best fits obtained by using the fitting function: R□ min + aT + bT2 (see text). They show a remarkable agreement with the experimental data; (b) The Bloch-Grüneisen temperature ΘBG and the m exponent of the Bloch-Grüneisen model (Eq. 3) versus the charge density n2D for 4LG and 5LG devices. While the average values of ΘBG in 4LG and 5LG are remarkably different, no significant doping dependence of ΘBG can be appreciated in these curves.
