Figure 3
(a) Phonon density of states of Si and Ge atoms at the interfaces in the samples Ge100/Si, Ge110/Si, Si110/Si, SiGe/Si and NiSi2/Si with respect to those of bulk. (b) Relaxed structures of Ge100/Si, Ge110/Si and NiSi2/Si nanocomposites at 300K.
