Figure 5 | Scientific Reports

Figure 5

From: Low Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer

Figure 5

Cross-sectional TEM characterizations for bilayer sample.

TEM micrograph of (a) the stack structure of glass-substrate/ITO (150 nm)/ATO (220 nm)/bilayer and (b) details of copper oxide (pink rectangular) and tin oxide (yellow rectangular) zones, EDS point analysis positions were labeled as P1 and P2. (c) High resolution TEM micrograph of bilayer sample, FFT analysis of selected zones are depicted as the insets.

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