Table 1 Summary of state-of-the-art III-V TFET demonstrations
Affiliation | Ref. | Year | Technology | Material System | Ion(A) per nanowire | Ion(µA /µm) | SS (mV/dec) |
|---|---|---|---|---|---|---|---|
Penn State | [26] | 2010 | Non planar single gate | In0.53Ga0.47As | NA | 4×10−1 | 100–216 |
Intel | [27] | 2011 | Planar | InGaAs | NA | ~ 7 | 60 |
UC Berkeley | [11] | 2011 | Planar | InAs | NA | 0.5 | 190 |
Univ. of Notre Dame | [28] | 2011 | Vertical InGaAs/ InP | InGaAs | NA | 20 | 130 |
IBM | [29] | 2011 | GAA NW | InAs/Si | 10−7 | 0.4 | 220 |
UT Austin | [30] | 2011 | Vertical single gate | In0.7Ga0.3As | NA | 40 | 84–380 |
IBM | [24] | 2012 | GAA NW | InAs/Si | Not reported | 2.4 | 150 |
Hokkaido Univ | [31] | 2012 | Vertical hetero NW | InAs/Si | Not reported | ~ 0.005 | 21 / 114 |
Univ. of Notre Dame | [32] | 2012 | Planar single gate | GaSb-InAs | NA | 180 | 200–400 |
Univ. of Notre Dame | [33] | 2012 | Planar single gate | InP-InGaAs | NA | 20 | 93–310 |
Penn State | [34] | 2012 | Vertical single gate | GaAsSb-InGaAs | NA | 135 | 230–350 |
Univ. of Notre Dame | [35] | 2012 | Planar single gate | AlGaSb-InAs | NA | 78 | 125–470 |
Hokkaido Univ | [12] | 2013 | Vertical hetero NW | InAs/Si | Not reported | 1 | 21 |
MIT | [36] | 2013 | Vertical single gate | InGa0.53As0.47-GaAs0.5Sb0.5 | NA | 0.5 | 140 |
