Figure 4
From: Stencil Nano Lithography Based on a Nanoscale Polymer Shadow Mask: Towards Organic Nanoelectronics
ID-VDS characteristics of pentacene FETs with selected channel lengths.
The applied back gate voltage (VGS) was varied from -40 V to 0 V with 10 V intervals. The channel width of all transistors was 2.5 μm.
