Figure 7
From: High-speed roll-to-roll manufacturing of graphene using a concentric tube CVD reactor
Improvement of graphene coverage and quality by exploring a matrix of process parameters using the CTCVD system, focusing on the influence of a static annealing step, process temperature and cooling atmosphere. a) Measured I2D/IG ratio values. In-process annealing time is determined by the substrate velocity. b) SEM images indicating graphene coverage and Cu grain size at various reactor temperatures, where the same temperature is maintained in both zones and all substrates are processed at 25 mm/min.
