Figure 5

Thickness and electric-field dependence of carrier mobility.
(a) Hole mobility measured with different configurations in the current study compared with the values obtained by the SCLC model on the basis of hole-only devices. (b) Hole mobility at various NPB thicknesses measured using the TOF measurement with a CGL. (c) Electron mobility at various NPB thicknesses measured using the TOF measurement with a CGL. The inset shows electron dispersion parameters as a function of applied electric fields for the TOF samples with various thicknesses of the NPB. The terms w/o and w/ represent the without and with, respectively.