Figure 1
From: Low-energy Resistive Random Access Memory Devices with No Need for a Compliance Current
(a) Schematic diagram of the sample layout and measurement configuration. (b)The XRD patterns of the STO/LSMO/MAO/Cu device. (c) The I−V characteristics of the STO/LSMO/Cu film. (d) The temperature dependence of the resistance for the STO/LSMO /Cu film.
