Figure 6 | Scientific Reports

Figure 6

From: Ultraviolet photoconductive devices with an n-GaN nanorod-graphene hybrid structure synthesized by metal-organic chemical vapor deposition

Figure 6

Comparison of room-temperature photoluminescence spectra.

Emission from n-GaN NRs at 365 nm along with defect-related broad emission at approximately 546 nm when the NRs were directly grown on a Si (111) substrate (black line). The defect-related PL emission was well suppressed because of the integration of GaN NRs with the monolayer graphene (red line).

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