Figure 5
(a) Schematic diagram of ZnO-FeS2-CuI p-i-n photodiode. The device can work at zero or reverse bias voltage. The drift and diffusion process of electron and hole are shown here. SEM images of typical photodiode device: (b) cross section, the thickness of each layer is shown here. Plane view of each layer (c) ZnO micro/nanowire arrays, (d) FeS2 NCs film, (e) CuI film. The insets of (c) and (d) are corresponding water contact angles.
