Figure 3
From: Carbon Nanotube Driver Circuit for 6 × 6 Organic Light Emitting Diode Display
Electrical properties of top-gated SWNT-TFTs used in the AM OLED driver circuit.
(a) Schematic diagram of the top-gated SWNT-TFT fabricated on a quartz substrate with Ti/Au source and drain electrodes, Si3N4 gate dielectric and Ti/Au top gate. (b) Transfer (ID-VG) characteristics (the red curve is plotted in the log scale and the blue curve is in the linear scale) and transconductance (gm-VG) characteristics (the black curve) of a typical ST (channel length L = 80 μm, channel width W = 200 μm) with VD = 1 V. (c) Output (ID-VD) characteristics of the same transistor with VG varying from 10 to −10 V with −5 V steps. (d) The current on/off ratios and on-current values of 36 STs (L = 80 μm, W = 200 μm).
