Figure 1
From: Electrically induced ambipolar spin vanishments in carbon nanotubes
Schematics of a SWCNT transistor and spin states in SWCNTs.
(a) Schematic of the device structure of the SWCNT transistor used in this study. (b) Schematics of the cross section of the device structure with spin states in the transistor at VG = 0 V (left), for VG > 0 V (center) and for VG < 0 V (right). (c) Schematics of the energy diagram of conduction band (CB), valence band (VB) and non-bonding orbital (NBO) of the SWCNTs with spin states at VG = 0 V (left), for VG > 0 V (center) and for VG < 0 V (right).
