Figure 2

(a) Calculated temperature increase distribution T(r,z) in a 5-nm thick layer of 2D material onto a 285-nm thick SiO₂ substrate under laser light heating. For clarity, the thickness of the first layer in the picture is not to scale. The following are the assumptions used in the model: κ_2D = 300 W/mK, κ_SiO2 = 1.37 W/mK, g_2D/SiO2 = 3 MW/m²K, Q = 1 mW, NA = 0.530, r₀ = 0.386 μm and z_L = 0. The averaged value of the temperature increase T_m calculated for different values of the thermal conductivity and total interface conductance is shown in (b) when the effect of the heating of the substrate is included and in (c) when this effect is neglected. The ratio of the temperature increase calculated at the focus T_m(z_L = 0) and 1 μm from the focus T_m(z_L = 1 μm) for different values of κ and g is shown in (d) when the effect of the heating of the substrate is included and in (e) when this effect is neglected.