Figure 1 | Scientific Reports

Figure 1

From: Field-effect control of superconductivity and Rashba spin-orbit coupling in top-gated LaAlO3/SrTiO3 devices

Figure 1

Device structure and superconducting transition.

(a) Schematic of the LaAlO3/SrTiO3 device with a 500 nm thick Si3N4 dielectric layer (scheme drawn by N. B.). (b) Dark-field optical picture of the device showing the Hall bar covered by a top-gate. (c) Sheet resistance as a function of temperature showing a superconducting transition at a critical transition temperature Tc ≈ 250 mK. Inset) Current-voltage characteristics of the device indicating the critical current Ic = 460 nA. The arrows indicate the direction of the current sweep.

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