Figure 4
From: Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions
(a)Resistance hysteresis loops of FTJ measured at 40 K using the pulse voltage to write and changing with the maximum voltage increasing from 1.0 to 2.5 V were applied. Read pulses of 0.1 V were applied after each write pulse. The corresponding domain evolution is shown schematically in the bottom-right and top-left insets for the ON and OFF states, respectively. (b) PFM phase images of BTO areas switched with the voltage used in the measurement. Relative fraction of switching domains show states achieved by the application of positive (and negative) voltage pulses of increasing amplitude.
