Figure 1
From: Nanocontact Disorder in Nanoelectronics for Modulation of Light and Gas Sensitivities
(a) Statistical distribution of InP NW diameters fitted with a Gaussian curve in red. (b) Schematic of the InP NW device, with overlaid circuit diagram used in this study. A highly doped Si substrate was used as the back gate. (c) Microscope image of a typical InP NW device. The inset shows the NC of the Ti layer, defined as the interface between an InP NW and the Au current lead. The thickness of the Ti NC layer was ~20 nm. (d) Histogram of RT resistance for the InP NW devices at zero gate voltage. Ids − Vds curves under different Vbg for InP NW devices with RT resistances of (e) 1070 (NW1) and (f) 22 (NW7) MΩ, respectively.
