Figure 2
From: Nanocontact Disorder in Nanoelectronics for Modulation of Light and Gas Sensitivities
Ids − Vds curves at various temperatures for InP NW devices with RT resistances of (a) 1070 (NW1) and (b) 22 (NW7) MΩ, respectively. (c) Resistance as a function of inverse temperature for InP NW devices (NW1–7). The RT resistances are 1070, 650, 312, 99, 65, 31 and 22 MΩ for NW1–7 devices, respectively; the solid lines are best fits. The inset introduces a resistor network model to describe the total device resistance from the NC to the NW. The NC resistance comprises two parallel, connected resistances: the Schottky contact resistance (RSc) and Mott’s VRH resistance (RVRH). The total device resistance is diagramed as the NC resistance connected with the NW resistance (RNW) in series.
