Figure 6
From: Nanocontact Disorder in Nanoelectronics for Modulation of Light and Gas Sensitivities
(a) Cross-sectional TEM image of the SiO2/Ti/Au interface. The specimen was prepared by the same thermal-evaporation method used to fabricate the InP NW devices. The inset shows a magnified view of the square area, revealing crystalline Ti metal clusters embedded in a disordered layer. (b) Schematic of charge transport for the NC of the NW-dominated device (I) in the dark and (II) in green light and schematic of charge transport for the NC of the NC-dominated device (III) in the dark and (IV) in green light. (c) Schematic of gas exposure in (I and II) oxygen, (III) vacuum and (IV) nitrogen.
