Figure 5
From: Sub-0.5 V Highly Stable Aqueous Salt Gated Metal Oxide Electronics
Electrical characteristics of IGZO-EGTFTs operated in a PBS solution.
(a) Representative bidirectional sweep of transfer curves (red), square-root of channel current (blue) and gate leakage current (gray) at VD = +0.5 V. (b) output curves at different gate biases (0 to +0.5 V with a 0.1 V step). (c) Drain current versus time (log scales) measured at every 1 s with alternating gate biases of +0.3 and −0.3 V and a constant drain bias of +0.5 V of over 103 cycles. Statistical distributions of (d) maximum transconductance (gm,max), (e) threshold voltage (VTh) and (f) subthreshold swing (S.S.).
