Figure 5 | Scientific Reports

Figure 5

From: Quick Fabrication of Large-area Organic Semiconductor Single Crystal Arrays with a Rapid Annealing Self-Solution-Shearing Method

Figure 5

Electrical properties of the BPEA arrays.

(a) Optical microscope of the FET transistor fabricated by manually gluing Au-films. The active channel width was measured from the contacting area of the crystals which crosses the drain and source electrodes. (b) Histograms of field effect mobility, standard deviation: 0.1 and maximum mobility: 0.472 cm2V−1s−1 measured from 18 transistors. (c) Transfer (d) Output characteristics of a typical device showing a saturation mobility 0.26 cm2V−1s−1 and good gate modulation (e) Perfect photoresponse with Ilight/Idark = 4.06 × 105 (white light, light density 3.75 mw/cm2, V = 80V). (f) Inverter fabricated on the PI substrate by in-situ growth showing a good performance.

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